Molecular-dynamics study of surface segregation in liquid semiconductor alloys
نویسندگان
چکیده
We report the results of a molecular-dynamics study of the surface tension and surface profile of liquid Si and Ge (l -Si and l -Ge! and their alloys using empirical Stillinger-Weber potentials. The calculations are carried out at two temperatures slightly above the melting temperatures of Si and Ge and the alloys Si 0.8Ge 0.2 and Si 0.2Ge 0.8 . They show clear evidence of surface segregation by Ge, the component with the lower surface tension. @S0163-1829~97!05843-8#
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